零件编号 : K10A60D
描述
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type / Switching Regulator Applications
制造商 : Toshiba
引脚图 : 
描述
:
• Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.)
• High forward transfer admittance: |Yfs| = 6.0 S (typ.)
• Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)
• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
数据手册 PDF资料下载
文件中的其他数据表： K10A60, K10A60D, TK10A60D