K10A60D 数据手册 PDF

零件编号 : K10A60D

描述

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type / Switching Regulator Applications

制造商 : Toshiba

引脚图 :
K10A60D datasheet

描述

:

• Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.)

• High forward transfer admittance: |Yfs| = 6.0 S (typ.)

• Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)

• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

数据手册 PDF资料下载

K10A60D pdf

文件中的其他数据表: K10A60, K10A60D, TK10A60D