BSS123 数据手册 PDF / Fairchild

零件编号 : BSS123

描述

N-Channel Logic Level Enhancement Mode Field Effect Transistor

制造商 : Fairchild Semiconductor

引脚图 :

BSS123 datasheet

描述

:

General

描述

These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary,high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

特征

– 0.17 A, 100 V. Rds(on) = 6W @ Vgs= 10 V
Rds(on) = 10W @ Vgs= 4.5 V
– High density cell design for extremely lowRDS(ON)
– Rugged and Reliable
– Compact industry standard SOT-23 surface mount package

数据手册 PDF资料下载

BSS123 pdf

文件中的其他数据表:
BSS123