零件编号 : RJP63F3A

描述

630V 40A N-ch IGBT

封装形式 : TO-220FL Type

图像 :

描述

:
Silicon N Channel IGBT High Speed Power Switching

特征

:
•  Trench gate and thin wafer technology (G6H series)
•  Low collector to emitter saturation voltage  VCE(sat)= 1.7 V typ
•  High speed switching tf = 100 ns typ
•  Low leak current  ICES= 1 μA max
•  Isolated package TO-220FL

JP63F3A = RJP63F3DPP-M0

RJP63F3A Datasheet