零件编号 : RJP63F3A
描述
630V 40A N-ch IGBT
封装形式 : TO-220FL Type
描述
:
Silicon N Channel IGBT High Speed Power Switching
特征
:
• Trench gate and thin wafer technology (G6H series)
• Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ
• High speed switching tf = 100 ns typ
• Low leak current ICES= 1 μA max
• Isolated package TO-220FL
JP63F3A = RJP63F3DPP-M0